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12 Results:AA:BAE JH AA:M. K. BAE 0.296 sec.
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1
Studies on the mitigation of the stray current corrosion of underground pipelines I: Field investigation
Studies on the mitigation of the stray current corrosion of underground pipelines I: Field investigation
Ha, Y.C., | Cenatral Electrochemical Research Instiitute | 2007 ,
2
Remote corrosion monitoring system for buried pipeline using trunked radio system and permanent reference electrode
Remote corrosion monitoring system for buried pipeline using trunked radio system and permanent reference electrode
Bae, J.H., | Cenatral Electrochemical Research Instiitute | 2007 ,
3
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
S.H.Shin, | 대한전자공학회 | 2003 ,
4
Electronic Band Structure and Photocatalytic Activity of M-Doped TiO(M=Co and Fe)
Electronic Band Structure and Photocatalytic Activity of M-Doped TiO(M=Co and Fe)
M. G. Ha, | 한국물리학회 | 2007 ,
5
Launcher Study for KSTAR 5 GHz LHCD System
Launcher Study for KSTAR 5 GHz LHCD System
Young S. Bae, | 한국물리학회 | 2006 ,
6
Re-Crystallization and Characteristic As Properties of As-Implanted ZnO Activated by Ozone at Various Annealing Temperatures
Re-Crystallization and Characteristic As Properties of As-Implanted ZnO Activated by Ozone at Various Annealing Temperatures
T. S. Jeong, | 한국물리학회 | 2006 ,
7
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
M. K. Bae, | 한국물리학회 | 2006 ,
8
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
M. K. Bae, | 한국물리학회 | 2007 ,
9
Design and Physics Issues of the PAL-XFEL
Design and Physics Issues of the PAL-XFEL
T.-Y. LEE, | 한국물리학회 | 2006 ,
10
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
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