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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
상세정보
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- S.H.Shin
- 서명/저자
- Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM / S.H.Shin , 공저 S.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
- 발행사항
- 서울 : 대한전자공학회, 2003.
- 형태사항
- pp. 69-75
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202506
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aS.H.Shin
■24510▼aData Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM▼dS.H.Shin▼e공저 S.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 69-75
■500 ▼a참고문헌 수록
■7001 ▼aS.H.Lee, Y.S.Kim, J.H.Heo, D.I. Bae, S.H.Hong, S.H.Park, J.W.Lee, J.G.Lee, J.H.Oh, M.S.Kim, C.H.Cho, T.Y.Chung, Kinam Kim
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 2, (2003 June)▼d2003, 06
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013698▼b60054120▼h8▼s2▼fP
