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The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- D. H. Shin.
- 서명/저자
- The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers / D. H. Shin , M. K. Bae , S. N. Yi , J. H. Na , A. M. Green , R. A. Taylor , Y. J. Cho , H. M. Cho , S. H. Park.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 1255-1258
- 기타저자
- M. K. Bae
- 기타저자
- S. N. Yi
- 기타저자
- J. H. Na
- 기타저자
- A. M. Green
- 기타저자
- R. A. Taylor
- 기타저자
- Y. J. Cho
- 기타저자
- H. M. Cho
- 기타저자
- S. H. Park.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60096920
MARC
008070411s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aD. H. Shin.
■245 ▼aThe Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers ▼dD. H. Shin▼eM. K. Bae▼eS. N. Yi▼eJ. H. Na▼eA. M. Green▼eR. A. Taylor▼eY. J. Cho▼eH. M. Cho▼eS. H. Park.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1255-1258
■653 ▼aSTRUCTURAL▼aPROPERTIES▼aGAN▼aGROWN▼aSUBSTRATES▼aUSING▼aVARIOUS▼aANNEALING▼aCONDITIONS▼aALN▼aBUFFER▼aLAYERS
■7001 ▼aM. K. Bae
■7001 ▼aS. N. Yi
■7001 ▼aJ. H. Na
■7001 ▼aA. M. Green
■7001 ▼aR. A. Taylor
■7001 ▼aY. J. Cho
■7001 ▼aH. M. Cho
■7001 ▼aS. H. Park.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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