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29 Results:UU:VOL49SUPPLEMENTARYISSSUIII200612 0.78 sec.
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1
Two-Color InAs/InGaAs Quantum-Dot Infrared Photodetectors for Mid-and Long-Wavelength Infrared Detection
Two-Color InAs/InGaAs Quantum-Dot Infrared Photodetectors for Mid-and Long-Wavelength Infrared Detection
Eui-Tae Kim, | 한국물리학회 | 2007 ,
2
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
J. H. Lee, | 한국물리학회 | 2007 ,
3
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Bonghyun Park, | 한국물리학회 | 2007 ,
4
Compact SPICE Modeling of LC Cell for TV Panel Simulation
Compact SPICE Modeling of LC Cell for TV Panel Simulation
Sukin Yoon, | 한국물리학회 | 2007 ,
5
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
Jae Won Choi, | 한국물리학회 | 2007 ,
6
Fabrication and Characterization of Nano-Hole-Arrayed Pt Electrode on Silicon for CMOS Integrated Non-Disposable Biosensor Applications
Fabrication and Characterization of Nano-Hole-Arrayed Pt Electrode on Silicon for CMOS Integrated Non-Disposable Biosensor Applications
Hye-Kyoung Seo, | 한국물리학회 | 2007 ,
7
Computer simulation of a Complex MEMS Structure Processed by an Anisotropic Etching Process
Computer simulation of a Complex MEMS Structure Processed by an Anisotropic Etching Process
Jun-Gu Lee, | 한국물리학회 | 2007 ,
8
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
9
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
10
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Seung-Hwan Song, | 한국물리학회 | 2007 ,
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