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Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Kyong-Jin Hwang
- 서명/저자
- Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI / Kyong-Jin Hwang , Jong-Hyuck Oh , Nag-Kyun Sung , Doo=Yeol Ryu , Seung-Hoon Sa , Kun-Joo Park , Jong-Kon Lee , Jeong-gun Lee , Sung-Hyung Park , Tea-Gyu Goo , Hi-Deok Lee
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. S795-S799
- 기타저자
- Jong-Hyuck Oh
- 기타저자
- Nag-Kyun Sung
- 기타저자
- Doo=Yeol Ryu
- 기타저자
- Seung-Hoon Sa
- 기타저자
- Kun-Joo Park
- 기타저자
- Jong-Kon Lee
- 기타저자
- Jeong-gun Lee
- 기타저자
- Sung-Hyung Park
- 기타저자
- Tea-Gyu Goo
- 기타저자
- Hi-Deok Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145410
MARC
008101018s2007 ulka a eng■022 ▼a03744884
■1001 ▼aKyong-Jin Hwang
■24510▼aCharacterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI▼dKyong-Jin Hwang▼eJong-Hyuck Oh▼eNag-Kyun Sung▼eDoo=Yeol Ryu▼eSeung-Hoon Sa▼eKun-Joo Park ▼eJong-Kon Lee▼eJeong-gun Lee▼eSung-Hyung Park▼eTea-Gyu Goo▼eHi-Deok Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S795-S799
■7001 ▼aJong-Hyuck Oh
■7001 ▼aNag-Kyun Sung
■7001 ▼aDoo=Yeol Ryu
■7001 ▼aSeung-Hoon Sa
■7001 ▼aKun-Joo Park
■7001 ▼aJong-Kon Lee
■7001 ▼aJeong-gun Lee
■7001 ▼aSung-Hyung Park
■7001 ▼aTea-Gyu Goo
■7001 ▼aHi-Deok Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP
