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1
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
Surface Investigation of a Cubic AIN Buffer Layer and GaN Grown on Si (111) and (100) as Revealed by Atomic force Microscopy
M. K. Bae, | 한국물리학회 | 2006 ,
2
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
M. K. Bae, | 한국물리학회 | 2007 ,
3
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
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