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851
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
Jong-Man Kim, | 대한전자공학회 | 2004 ,
852
Design and Analysis of Linear Channel-Selection Filter for Direct Conversion Receiver
Design and Analysis of Linear Channel-Selection Filter for Direct Conversion Receiver
Sangsu Jin, | 대한전자공학회 | 2004 ,
853
Investigation of Pyrolyzed Polymide Thin Film as MEMS Material
Investigation of Pyrolyzed Polymide Thin Film as MEMS Material
Keisuke Naka, | 대한전자공학회 | 2005 ,
854
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
S. Jit, | 대한전자공학회 | 2005 ,
855
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
S. Jit, | 대한전자공학회 | 2002 ,
856
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
857
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
Dae-Hyun Kim, | 대한전자공학회 | 2003 ,
858
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
G.S.Cho, | 대한전자공학회 | 2003 ,
859
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Steven H. Voldman, | 대한전자공학회 | 2003 ,
860
Analog CMOS Performance Degradation due to Edge Direct Tunnelling(EDT) Current in sub-100nm Technology
Analog CMOS Performance Degradation due to Edge Direct Tunnelling(EDT) Current in sub-100nm Technology
Navakanta Bhat, | 대한전자공학회 | 2003 ,
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