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A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
상세정보
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- S. Jit
- 서명/저자
- A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFETs / S. Jit , 공저 Saurabh Morarka, Saurabh Mishra
- 발행사항
- 서울 : 대한전자공학회, 2005.
- 형태사항
- pp. 173-181
- 주기사항
- 참고문헌 수록
- 기본자료저록
- Journal of Semiconductor Technology and Science : Volume 5, Number 3, (2005 September) 2005, 09
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202561
MARC
008190108s2005 ulk aa eng■022 ▼a15981657
■1001 ▼aS. Jit
■24510▼aA 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's▼dS. Jit▼e공저 Saurabh Morarka, Saurabh Mishra
■260 ▼a서울▼b대한전자공학회▼c2005.
■300 ▼app. 173-181
■500 ▼a참고문헌 수록
■7001 ▼aSaurabh Morarka, Saurabh Mishra
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 5, Number 3, (2005 September)▼d2005, 09
■856 ▼ahttp://www.jsts.org
■SIS ▼aS016607▼b60054120▼h8▼s2▼fP
