본문

  1. Home
1000 Results:AA:S L CHAN 0.423 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
851
Determanation of Water Content in Aprotic Organic Solvents Using 8-Hydroxyquinoline Based Fluorescent Probe
Determanation of Water Content in Aprotic Organic Solvents Using 8-Hydroxyquinoline Based Fluorescent Probe
Jun Soo Kim, | 대한화학회 | 2006 ,
852
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
A Micromachined Two-state Bandpass Filter using Series Inductors and MEMS Switches for WLAN Applications
Jong-Man Kim, | 대한전자공학회 | 2004 ,
853
Design and Analysis of Linear Channel-Selection Filter for Direct Conversion Receiver
Design and Analysis of Linear Channel-Selection Filter for Direct Conversion Receiver
Sangsu Jin, | 대한전자공학회 | 2004 ,
854
Investigation of Pyrolyzed Polymide Thin Film as MEMS Material
Investigation of Pyrolyzed Polymide Thin Film as MEMS Material
Keisuke Naka, | 대한전자공학회 | 2005 ,
855
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted short - Channel Ion - Implanted Silicon MESFET's
S. Jit, | 대한전자공학회 | 2005 ,
856
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
A 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short - Channel Ion - Implanted Silicon MESFET's
S. Jit, | 대한전자공학회 | 2002 ,
857
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
858
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
Dae-Hyun Kim, | 대한전자공학회 | 2003 ,
859
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source
G.S.Cho, | 대한전자공학회 | 2003 ,
860
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Steven H. Voldman, | 대한전자공학회 | 2003 ,
처음이전81828384858687888990이후마지막