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61
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Y.K. Park, | 대한전자공학회 | 2003 ,
62
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
S.H.Shin, | 대한전자공학회 | 2003 ,
63
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
I-H.Kang, | 대한전자공학회 | 2003 ,
64
Call Papers on March 2004 Speical Issue on Scaled Nano Devices
Call Papers on March 2004 Speical Issue on Scaled Nano Devices
, | 대한전자공학회 | 2003 ,
65
Call Papers on December 2003 Special Issue on SOC Design
Call Papers on December 2003 Special Issue on SOC Design
, | 대한전자공학회 | 2003 ,
66
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
Steven H. Voldman, | 대한전자공학회 | 2003 ,
67
Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
H.T.Kim, | 대한전자공학회 | 2003 ,
68
Analog CMOS Performance Degradation due to Edge Direct Tunnelling(EDT) Current in sub-100nm Technology
Analog CMOS Performance Degradation due to Edge Direct Tunnelling(EDT) Current in sub-100nm Technology
Navakanta Bhat, | 대한전자공학회 | 2003 ,
69
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
70
Some Characteristics of Anisotropic Conductive and Non-conductive Adhesive Fili Chip on Flex Interconnections
Some Characteristics of Anisotropic Conductive and Non-conductive Adhesive Fili Chip on Flex Interconnections
J.F.J.M.Caers, | 대한전자공학회 | 2003 ,
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