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491
Fabrication and Sensing Behavior of Ultrasensitive Piezoelectric Microcantilever-Based Precision Mass Sensor
Fabrication and Sensing Behavior of Ultrasensitive Piezoelectric Microcantilever-Based Precision Mass Sensor
sanghun Shin, | 한국물리학회 | 2007 ,
492
Ferromagnetic Behavior above Room Temperature of Fe-Ion-Implanted ZnO
Ferromagnetic Behavior above Room Temperature of Fe-Ion-Implanted ZnO
Y. Y. Song, | 한국물리학회 | 2007 ,
493
Magnetocardiographic Pattern Analysis of Re-entry Wave Propagation in Three-Dimensional Ventricular Tissue by Using a Human Cardiac Cell Model
Magnetocardiographic Pattern Analysis of Re-entry Wave Propagation in Three-Dimensional Ventricular Tissue by Using a Human Cardiac Cell Model
Uk Bin Im, | 한국물리학회 | 2007 ,
494
Progress of Physics Studies in the Hanbit Mirror Device
Progress of Physics Studies in the Hanbit Mirror Device
K.-I. You, | 한국물리학회 | 2006 ,
495
Characteristics of ZrCo Alloy for the Storage of Hydrogen Isotopes
Characteristics of ZrCo Alloy for the Storage of Hydrogen Isotopes
Myung-Hwa Shim, | 한국물리학회 | 2006 ,
496
Status of Manufacturing Feasibility Activities on ITER Thermal Shield
Status of Manufacturing Feasibility Activities on ITER Thermal Shield
Seungyon Cho, | 한국물리학회 | 2006 ,
497
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
B. H. Oh, | 한국물리학회 | 2006 ,
498
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
499
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
500
Selective Vapor Deposition of Poly(3,4-Ethylenedioxythiophene) ThinFilm on an n-Octadecyltrichlorosilane Monolayer Oxidized by Ultraviolet Photolithography
Selective Vapor Deposition of Poly(3,4-Ethylenedioxythiophene) ThinFilm on an n-Octadecyltrichlorosilane Monolayer Oxidized by Ultraviolet Photolithography
S. Kim, | 한국물리학회 | 2007 ,
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