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31
Rotating Black Hole Solutions in the Brans-Dicke Theory
Rotating Black Hole Solutions in the Brans-Dicke Theory
D. H. Park, | 한국물리학회 | 2007 ,
32
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
M. K. Bae, | 한국물리학회 | 2007 ,
33
Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes
Characterization and Fabrication of InAs Quantum-Dot/GaAs Resonant-Cavity Separate Absorption, Charge and Multiplication Avalanche Photodiodes
H. J. Song, | 한국물리학회 | 2007 ,
34
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer
E. H. KIM, | 한국물리학회 | 2006 ,
35
Design and Physics Issues of the PAL-XFEL
Design and Physics Issues of the PAL-XFEL
T.-Y. LEE, | 한국물리학회 | 2006 ,
36
Residual Stress and Optical Properties in a Post-Annealed Ta₂O5/SiO₂ Multilayer Prepared by Using Dual-Ion-Beam Sputtering
Residual Stress and Optical Properties in a Post-Annealed Ta₂O5/SiO₂ Multilayer Prepared by Using Dual-Ion-Beam Sputtering
S. G. Yoon., | 한국물리학회 | 2006 ,
37
Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Jing-han Chen., | 한국물리학회 | 2006 ,
38
Rectification of Hetero Nanojunction of π-Conjugated Polymer Nanowires
Rectification of Hetero Nanojunction of π-Conjugated Polymer Nanowires
D. H. Park., | 한국물리학회 | 2006 ,
39
Magnetic and Transport Properties of Ti0.96CoxNi0.04-xO2-δ Thin Films
Magnetic and Transport Properties of Ti0.96CoxNi0.04-xO2-δ Thin Films
J. H. Cho., | 한국물리학회 | 2006 ,
40
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
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