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261
Signal Transmission Properties of the Inductive Coupler using the High Permeability Magnetic Mterials
Signal Transmission Properties of the Inductive Coupler using the High Permeability Magnetic Mterials
Hyun-Sik Kim, | 한국전기전자재료학회 | 2006 ,
262
Stackde Single Crystal Silicon TFT Cell의 적용에 의한 SRAM셀의 전기적인 특성에 관한 연구
Stackde Single Crystal Silicon TFT Cell의 적용에 의한 SRAM셀의 전기적인 특성에 관한 연구
강이구, | 한국전기전자재료학회 | 2006 ,
263
RF 마그네트론 스퍼터링 방법으로 SiO₂/Si(100)기판위에 성장시킨 ZnO 박막의 구조 및 광특성
RF 마그네트론 스퍼터링 방법으로 SiO₂/Si(100)기판위에 성장시킨 ZnO 박막의 구조 및 광특성
한석규, | 한국재료학회 | 2006 ,
264
Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing
Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing
Cho Kyu-Chul, | 한국재료학회 | 2006 ,
265
리튬 이온 전지용 Si/Mo 다층박막 음극의 전기화학적 특성
리튬 이온 전지용 Si/Mo 다층박막 음극의 전기화학적 특성
박종완, | 한국재료학회 | 2006 ,
266
저에너지의 Ar중성빔을 이용한 Silicon의 Atomic Layer Etching
저에너지의 Ar중성빔을 이용한 Silicon의 Atomic Layer Etching
오창권, | 한국재료학회 | 2006 ,
267
Fabrication of Monodisperse Silica Spheres Using Statistical Design of Experiments
Fabrication of Monodisperse Silica Spheres Using Statistical Design of Experiments
Hye-Jin Won, Young-Shin Pyo, Sang-Soon Oh, Yeong-, | Korean Institute of Metals and Materials | 2006 ,
268
Effect of High Energy Ball Milling on Displacement Reaction and Sintering of Al-Mg/SiO₂Composite Powders
Effect of High Energy Ball Milling on Displacement Reaction and Sintering of Al-Mg/SiO₂Composite Powders
K. D. Woo, H. W. Huo, | Korean Institute of Metals and Materials | 2006 ,
269
Interface Activation and Surface Characteristics of Ti/TiN/HA Coated Sintered Stainless Steels
Interface Activation and Surface Characteristics of Ti/TiN/HA Coated Sintered Stainless Steels
Han Cheol Choe, Yeong-Mu Ko, | Korean Institute of Metals and Materials | 2006 ,
270
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
Dae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae, | 대한전자공학회 | 2004 ,
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Institute of Ecology Vilnius University [, ]
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