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High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
상세정보
- 자료유형
- 기사
- ISSN
- 15981657
- 서명/저자
- High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization / Dae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae-Hak Lee, Kwang-Seok Seo
- 발행사항
- 서울 : 대한전자공학회, 2004.
- 형태사항
- pp. 117-123
- 키워드
- HIGH Fт 30NM TRIPLEGATE IN０.７GAAS HEMTS WITHDAMAGEFREE SIO₂SINX SIDEWALL PROCESS BCB PLANARIZATION
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60076446
MARC
008060529s2004 ULKa a ENG■022 ▼a15981657
■245 ▼aHigh fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization▼dDae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae-Hak Lee, Kwang-Seok Seo
■260 ▼a서울▼b대한전자공학회▼c2004.
■300 ▼app. 117-123
■653 ▼aHIGH▼aFт▼a30NM▼aTRIPLEGATE▼aIN０.７GAAS▼aHEMTS▼aWITHDAMAGEFREE▼aSIO₂SINX▼aSIDEWALL▼aPROCESS▼aBCB▼aPLANARIZATION
■700 ▼aDae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae-Hak Lee, Kwang-Seok Seo
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 4, Number 2, (2004 June)▼d2004, 06
■URL ▼ahttp://www.jsts.org
■SIS ▼aS013702▼b60054120▼h8▼s2
