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11
An analysis of the 2DEG(Dimensional Electron Gas)-emitter Heterojunction bipolar transistor
An analysis of the 2DEG(Dimensional Electron Gas)-emitter Heterojunction bipolar transistor
Lee Chona-Ha, 569.6-L477a-TD | Columbia University | 1996 569.6-L477a-TD,
12
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
13
Preparation of Field Effect Transistor with (Bi,La) Ti₃O₁₂Gate Film on Y₂O₃/Si Substrate
Preparation of Field Effect Transistor with (Bi,La) Ti₃O₁₂Gate Film on Y₂O₃/Si Substrate
Ho Jung Chang, Kwang Jong, Suh, Kang Mo Suh, Ji-, | 한국마이크로전자및 패키징학회 | 2005 ,
14
I/f Noise Characteristics of Sub-100 nm MOS Transistors
I/f Noise Characteristics of Sub-100 nm MOS Transistors
Jeong-Hyun Lee, Sang-Yun Kim, Ilhyun Cho, SunboH, | 대한전자공학회 | 2006 ,
15
Partially-insulated MOSFET (PiFET) and Its Application to DRAM Cell Transistor
Partially-insulated MOSFET (PiFET) and Its Application to DRAM Cell Transistor
Chang Woo Oh, Sung Hwan Kim, Kyoung Hwan Yeo, Sun, | 대한전자공학회 | 2006 ,
16
Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance
Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance
Sung Min Kim, Eun Jung Yoon, Min Sang Kim, Ming L, | 대한전자공학회 | 2006 ,
17
0.1㎛ 이하의 게이트 길이를 갖는 Metamorphic High Electron Mobility Transistor의 모델링 및 구조 최적화
0.1㎛ 이하의 게이트 길이를 갖는 Metamorphic High Electron Mobility Transistor의 모델링 및 구조 최적화
한민. 김삼동, 이진구, | 대한전자공학회 | 2005 ,
18
A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
Zhihong Liu, Changchun Chen, Wentao Huang, | 대한금속.재료학회 | 2004 ,
19
GaAs metal-semiconductor field-effect transistor에서 표면 결함이 소자의 전달컨덕턴스 분산 및 게이트 표면 누설 전류에 미치는 영향
GaAs metal-semiconductor field-effect transistor에서 표면 결함이 소자의 전달컨덕턴스 분산 및 게이트 표면 누설 전류에 미치는 영향
최경진, 이종람, | 대한전자공학회 | 2001 ,
20
THE NEW TRANSISTOR HEROES - [녹음자료]
THE NEW TRANSISTOR HEROES - [녹음자료]
비스, 673.53-비58t-CT | WIIIJA RECORDS | 1997 673.53-비58t-CT,
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