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I/f Noise Characteristics of Sub-100 nm MOS Transistors
I/f Noise Characteristics of Sub-100 nm MOS Transistors
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MARC
008060427s2006 ULKa a ENG■022 ▼a15981657
■245 ▼aI/f Noise Characteristics of Sub-100 nm MOS Transistors▼dJeong-Hyun Lee, Sang-Yun Kim, Ilhyun Cho, SunboHwang, Jong-Ho Lee
■260 ▼a서울▼b대한전자공학회▼c2006.
■300 ▼app. 38-42
■653 ▼aNOISE▼aCHARACTERISTICS▼aSUB100▼aNM▼aTRANSISTORS
■700 ▼aJeong-Hyun Lee, Sang-Yun Kim, Ilhyun Cho, SunboHwang, Jong-Ho Lee
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 6, Number 1, (2006 March)▼d2006, 03
■URL ▼ahttp://www.jsts.org
■SIS ▼aS021050▼b60054120▼h8▼s2
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