본문

  1. Home
16 Results:UU:VOLUME3NUMBER22003JUNE 0.78 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
1
Call Papers on March 2004 Special Issue on Scaled Nano Devices
Call Papers on March 2004 Special Issue on Scaled Nano Devices
, | 대한전자공학회 | 2003 ,
2
Call Papers on December 2003 Special Issue on SOC Design
Call Papers on December 2003 Special Issue on SOC Design
, | 대한전자공학회 | 2003 ,
3
Call Papers on September 2003 Special Issue on Device Reliability
Call Papers on September 2003 Special Issue on Device Reliability
, | 대한전자공학회 | 2003 ,
4
Dual Edge-Triggered NAND-Keeper Flip-Flop for high-Perofrmance VLSI
Dual Edge-Triggered NAND-Keeper Flip-Flop for high-Perofrmance VLSI
Jae-Il Kim, | 대한전자공학회 | 2003 ,
5
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Investigation of Oxygen Incorporation in A1GaN/GaN Heterostructures
Ho Won Jang, | 대한전자공학회 | 2003 ,
6
High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
Won-Young Uhm, | 대한전자공학회 | 2003 ,
7
CCD Image Sensor with Variable Rest Operation
CCD Image Sensor with Variable Rest Operation
Sangsik Park, | 대한전자공학회 | 2003 ,
8
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Y.K. Park, | 대한전자공학회 | 2003 ,
9
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
S.H.Shin, | 대한전자공학회 | 2003 ,
10
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
I-H.Kang, | 대한전자공학회 | 2003 ,
처음12이후마지막