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811
Enhanced Hole Injections in Organic Light Emitting Diode using Rhodium Oxide Coated Anode
Enhanced Hole Injections in Organic Light Emitting Diode using Rhodium Oxide Coated Anode
Soo Young Kim, | 대한전자공학회 | 2005 ,
812
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
813
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
814
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
815
Fabrication Uncertainty and Noise Issues in high-Precision MEMS Actuators and Sensors
Fabrication Uncertainty and Noise Issues in high-Precision MEMS Actuators and Sensors
Young-Ho Cho, | 대한전자공학회 | 2002 ,
816
Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy
Piezoelectric PZT Cantilever Array Integrated with Piezoresistor for High Speed Operation and Calibration of Atomic Force Microscopy
Young-Sik Kim, | 대한전자공학회 | 2002 ,
817
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Y.K. Park, | 대한전자공학회 | 2003 ,
818
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
S.H.Shin, | 대한전자공학회 | 2003 ,
819
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
820
CMOS compatible Fabrication Technique for Nano-Transistors by Conventional Optical Lithography
CMOS compatible Fabrication Technique for Nano-Transistors by Conventional Optical Lithography
C. Horst, | 대한전자공학회 | 2004 ,
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