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711
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Mungi Park, | 한국물리학회 | 2007 ,
712
Impedance Spectroscopy Analysis of Organic Light-Emitting Diodes Fabricated on Plasma-Treated Indium-Tin-Oxide surfaces
Impedance Spectroscopy Analysis of Organic Light-Emitting Diodes Fabricated on Plasma-Treated Indium-Tin-Oxide surfaces
Hyungjun Park, | 한국물리학회 | 2007 ,
713
Patterned Amine Surfaces with Reduced Background Nonspecific Protein Adsorption Fabricated by Using Inductively Coupled Plasma Chemical Vapor Deposition
Patterned Amine Surfaces with Reduced Background Nonspecific Protein Adsorption Fabricated by Using Inductively Coupled Plasma Chemical Vapor Deposition
Sanghak Yeo, | 한국물리학회 | 2007 ,
714
Plasma Density, Electron Temperature, Excited Xenon Density and Ion-Induced Secondary Electron Emission Coefficient for the Vacuum Ultraviolet Luminous Efficiency in an Alternating Current Plasma Display Panel
Plasma Density, Electron Temperature, Excited Xenon Density and Ion-Induced Secondary Electron Emission Coefficient for the Vacuum Ultraviolet Luminous Efficiency in an Alternating Current Plasma Display Panel
Eun Ha Choi, | 한국물리학회 | 2007 ,
715
Study on Leak Rate of SCC Degraded Alloy 600 Tubings of PWRs
Study on Leak Rate of SCC Degraded Alloy 600 Tubings of PWRs
Seong Sik Hwang, | 한국부식방식학회(구)한국부식학회 | 2004 ,
716
Effects of PbO on the Repassivation Kinetics of Allo 690
Effects of PbO on the Repassivation Kinetics of Allo 690
Sejin Ahn, | 한국부식방식학회(구)한국부식학회 | 2004 ,
717
A Quantitative Study of the Relationship Between Absorbed Energy and DR Pixel Values Based on the X-ray Energy Spectrum Model
A Quantitative Study of the Relationship Between Absorbed Energy and DR Pixel Values Based on the X-ray Energy Spectrum Model
Do-Il Kim, | 한국물리학회 | 2007 ,
718
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
M. K. Bae, | 한국물리학회 | 2007 ,
719
Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents
Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents
Dongwon Lee, | 한국물리학회 | 2007 ,
720
The Stucture of BC3N Tubular Nanofilber Synthesized by Using PECVD
The Stucture of BC3N Tubular Nanofilber Synthesized by Using PECVD
Ji Hoon Yang, | 한국물리학회 | 2007 ,
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