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91
Effect of Surface Passivants on the Photoluminescence from Si Nanocrystals
Effect of Surface Passivants on the Photoluminescence from Si Nanocrystals
Moon-seung Yang., | 한국물리학회 | 2006 ,
92
X-Band Ferroelectric Phase Shifter Using Voltage-Tunable (Ba, Sr)TiO₃Varactors
X-Band Ferroelectric Phase Shifter Using Voltage-Tunable (Ba, Sr)TiO₃Varactors
S. J. Lee., | 한국물리학회 | 2006 ,
93
Determination of an Optimized Alq?? Layer Thickness in Organic Light-Emitting Diodes by Using Microcavity Effects
Determination of an Optimized Alq?? Layer Thickness in Organic Light-Emitting Diodes by Using Microcavity Effects
Boo-young Jung., | 한국물리학회 | 2006 ,
94
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Changhun Ko., | 한국물리학회 | 2006 ,
95
Patterning of Thin Copper Films Under UV Exposure in Chlorine-Based Liquids
Patterning of Thin Copper Films Under UV Exposure in Chlorine-Based Liquids
K. K. Chattopadhyay., | 한국물리학회 | 2006 ,
96
Femtosecond-Laser Surface Structuring of Amorphous and Crystalline Silicon
Femtosecond-Laser Surface Structuring of Amorphous and Crystalline Silicon
Geon Joon Lee., | 한국물리학회 | 2006 ,
97
Light-Induced Dispersion in Noninstantaneous Response Nonlinear Optical Materials
Light-Induced Dispersion in Noninstantaneous Response Nonlinear Optical Materials
Q. Yang., | 한국물리학회 | 2006 ,
98
Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Joon Seop Kwak., | 한국물리학회 | 2006 ,
99
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
100
Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
B. Karunagaran., | 한국물리학회 | 2006 ,
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