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531
Effects of Strain and Interface Roughness Between an AlN Buffer Layer and a ZnO Film Grown by Using Radio-Frequency Magnetron Sputtering
Effects of Strain and Interface Roughness Between an AlN Buffer Layer and a ZnO Film Grown by Using Radio-Frequency Magnetron Sputtering
M. S. Yi., | 한국물리학회 | 2006 ,
532
Correlation Between Microstructural and Optical-Diffraction Properties in Femtosecond-Laser-Induced Gratings of Amorphous Co??MnSi Film
Correlation Between Microstructural and Optical-Diffraction Properties in Femtosecond-Laser-Induced Gratings of Amorphous Co??MnSi Film
Geon Joon Lee., | 한국물리학회 | 2006 ,
533
Determination of an Optimized Alq?? Layer Thickness in Organic Light-Emitting Diodes by Using Microcavity Effects
Determination of an Optimized Alq?? Layer Thickness in Organic Light-Emitting Diodes by Using Microcavity Effects
Boo-young Jung., | 한국물리학회 | 2006 ,
534
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Changhun Ko., | 한국물리학회 | 2006 ,
535
Femtosecond-Laser Surface Structuring of Amorphous and Crystalline Silicon
Femtosecond-Laser Surface Structuring of Amorphous and Crystalline Silicon
Geon Joon Lee., | 한국물리학회 | 2006 ,
536
Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Al-Based Contacts on Ga-Face and N-Face N-GaN Wafer Grown by Using Hydride Vapor Phase Epitaxy
Joon Seop Kwak., | 한국물리학회 | 2006 ,
537
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
538
Semiconductor Quantum Dots Emitting at 1.5 ??m :Optical Properties and Device Applications
Semiconductor Quantum Dots Emitting at 1.5 ??m :Optical Properties and Device Applications
N. J. Kim., | 한국물리학회 | 2006 ,
539
Optical Anisotropy of Microstructure-Controlled TiO?? Films Fabricated by Glancing-Angle Deposition(GLAD)
Optical Anisotropy of Microstructure-Controlled TiO?? Films Fabricated by Glancing-Angle Deposition(GLAD)
Seouk-hoon Woo., | 한국물리학회 | 2006 ,
540
Characterization of ZnO : Al-Thin-Film-Passivated Porous Silicon
Characterization of ZnO : Al-Thin-Film-Passivated Porous Silicon
Chongmu Lee., | 한국물리학회 | 2006 ,
처음이전49505152535455565758이후마지막
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