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1
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
2
Pd/Ge(or Si)/Pd/Ti/Au Ohmic Contacts to n-type InGaAs for AlGaAs/GaAs HBTs
Pd/Ge(or Si)/Pd/Ti/Au Ohmic Contacts to n-type InGaAs for AlGaAs/GaAs HBTs
Il-Ho Kim, | 대한금속.재료학회 | 2004 ,
3
ICP(Inductively Coupled Plasma)처리에 따른 n-type SiGe/Metal contact의 SBH(Schottky Barrier Height) 연구
ICP(Inductively Coupled Plasma)처리에 따른 n-type SiGe/Metal contact의 SBH(Schottky Barrier Height) 연구
김이곤, 장호원, 전창민, 송영주, 강진영, | 대한금속.재료학회 | 2005 ,
4
급속응고된 N-type Bi₂Te2.75Se0.15 열전재료의 미세조직과 열전특성에 미치는 압출비의 영향
급속응고된 N-type Bi₂Te2.75Se0.15 열전재료의 미세조직과 열전특성에 미치는 압출비의 영향
김태경, 이상일, 임종호, 손현택, 김택수, 천병선, | 대한금속.재료학회 | 2005 ,
5
Properties of Co-Doped n-type FeSi₂Processed by Mechanical alloying
Properties of Co-Doped n-type FeSi₂Processed by Mechanical alloying
Soon-Chul Ur,Il-Ho Kim and Jung-Il Lee, | 대한금속.재료학회 | 2002 ,
6
Thermoelectric Properties of the 0.05 wt.% SbI₃-Doped n-Type Bi₂(Te0.95Se0.05)₃Alloy Fabricated by the Hot Pressing Method
Thermoelectric Properties of the 0.05 wt.% SbI₃-Doped n-Type Bi₂(Te0.95Se0.05)₃Alloy Fabricated by the Hot Pressing Method
Sun Kyung Lee,Tae Sung Oh,Dow Bin Hyun, | 대한금속.재료학회 | 2000 ,
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