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1
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
2
Uncertain Lifetimes and the Implications of Social Security in an Endogenous Communication Model
Uncertain Lifetimes and the Implications of Social Security in an Endogenous Communication Model
KIYOUNG LEE, | The Korean Economic Association | 2000 ,
3
PMOSFET에서 Hot Carrier Lifetime은 Hole injection에 의해 지배적이며, Nano-Scale CMOSFET에서의 NMOSFET에 비해 강화된 PMOSFET 열화 관찰
PMOSFET에서 Hot Carrier Lifetime은 Hole injection에 의해 지배적이며, Nano-Scale CMOSFET에서의 NMOSFET에 비해 강화된 PMOSFET 열화 관찰
나준희, 최서윤, 김용구, 이희덕, | 대한전자공학회 | 2004 ,
4
Predicting Lifetime Reliability of an Existing Bridge with or without Maintenance
Predicting Lifetime Reliability of an Existing Bridge with or without Maintenance
Seung-Ie Yang, | 대한토목학회 | 2003 ,
5
Elastic-Plastic Stress analysis and Fatigue lifetime Prediction of Cross-Bores in AutoFrettaged Pressure Vessels
Elastic-Plastic Stress analysis and Fatigue lifetime Prediction of Cross-Bores in AutoFrettaged Pressure Vessels
Seung-Kee Koh, | 대한기계학회 | 2000 ,
6
Effects of Texture ans Grain Structure on Electromigration Lifetime of Al-Cu Interconnects
Effects of Texture ans Grain Structure on Electromigration Lifetime of Al-Cu Interconnects
Young Bae Park,Duk Won Lee, | 대한금속.재료학회 | 2001 ,
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