본문

  1. Home
11 Results:AA:SJLEE 0.63 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
1
Ta/TaNx Metal Gate Electrodes for Advanced CMOS Devices
Ta/TaNx Metal Gate Electrodes for Advanced CMOS Devices
S.J. Lee, | 대한전자공학회 | 2002 ,
2
Influence of a Strained AlGaN Overlayer on the GaN Matrix near AlGaN/GaN Heterointerfaces
Influence of a Strained AlGaN Overlayer on the GaN Matrix near AlGaN/GaN Heterointerfaces
S.J.Lee, | 한국물리학회 | 2007 ,
3
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Formation and Characteristics of Self-Assembled InGaN/GaN Quantum-Dot Structure Grown by Using Plasma-Assisted Molecular Beam Epitaxy
S.J.Lee, | 한국물리학회 | 2007 ,
4
Mean-Field Theoretical Structure of He and Be Isotopes
Mean-Field Theoretical Structure of He and Be Isotopes
S. J. Lee, | 한국물리학회 | 2007 ,
5
X-Band Ferroelectric Phase Shifter Using Voltage-Tunable (Ba, Sr)TiO₃Varactors
X-Band Ferroelectric Phase Shifter Using Voltage-Tunable (Ba, Sr)TiO₃Varactors
S. J. Lee., | 한국물리학회 | 2006 ,
6
Dynamic Headspace Analysis of Volatile Constituents of Swiss Cheese Whey Protein Concentrate
Dynamic Headspace Analysis of Volatile Constituents of Swiss Cheese Whey Protein Concentrate
E.Y.W. Ha, | KFN(한국식품영양과학회) | 2002 ,
7
Effect of Thermal Annealing on the Magnetic and the Optical Properties of (Ga₁_xMnx)N Thin Films Grown on GaN Buffer Layers
Effect of Thermal Annealing on the Magnetic and the Optical Properties of (Ga₁_xMnx)N Thin Films Grown on GaN Buffer Layers
H. C. Jeon, | 한국물리학회 | 2007 ,
8
Fano Resonance in an Aharonov-Bohm Interferometer with a Quantum Dot
Fano Resonance in an Aharonov-Bohm Interferometer with a Quantum Dot
Kyung Chul Seo, | 한국물리학회 | 2007 ,
9
Size Distribution Characteristics of Particulate Mass and Ion Components at Gosan, Korea form 2002 to 2003
Size Distribution Characteristics of Particulate Mass and Ion Components at Gosan, Korea form 2002 to 2003
J.S. Han, | 한국대기환경학회 | 2005 ,
10
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
처음12이후마지막