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1
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs Metamorphic High-Electron-Mobility Transistors
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs Metamorphic High-Electron-Mobility Transistors
Lee, Ching-sung, | 한국물리학회 | 2006 ,
2
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Navamathavan, R., | 한국물리학회 | 2006 ,
3
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
4
Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors
Nanoscale Floating-Gate Characteristics of Colloidal Au Nanoparticles Electrostatically Assembled on Si Nanowire Split-Gate Transistors
Hyeong-Seok Jeon., | 대한전자공학회 | 2006 ,
5
Overview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts
Overview of recent progress in high voltage insulated gate bipolar transistors(IGBTs)and its industrial impacts
윤종만, | 대한전자공학회 | 2006 ,
6
I/f Noise Characteristics of Sub-100 nm MOS Transistors
I/f Noise Characteristics of Sub-100 nm MOS Transistors
Jeong-Hyun Lee, Sang-Yun Kim, Ilhyun Cho, SunboH, | 대한전자공학회 | 2006 ,
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