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1
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperature Using BTBAS-NH₃-O₂
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperature Using BTBAS-NH₃-O₂
Lee, June Hee, | 한국물리학회 | 2006 ,
2
InGaN Multiple-Quantum-Well Epifilms on GaN-Sillicon Substrates for Microcavities and Surface-Emitting Lasers
InGaN Multiple-Quantum-Well Epifilms on GaN-Sillicon Substrates for Microcavities and Surface-Emitting Lasers
June Key LEE, | 한국물리학회 | 2006 ,
3
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
June Hee Lee, | 한국물리학회 | 2006 ,
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