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1
Call Papers on September 2005 Special Issue on Semiconductor Devices
Call Papers on September 2005 Special Issue on Semiconductor Devices
, | 대한전자공학회 | 2005 ,
2
A Design Evaluation of Strained SI-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs
A Design Evaluation of Strained SI-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs
Muhammad Nawaz, | 대한전자공학회 | 2005 ,
3
Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs
Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs
Hyuck Soo Yang, | 대한전자공학회 | 2005 ,
4
Green and Blue Light Emitting InN/GaN Quantum Wells with Nanosize Structures Grown by Metalorganic Chemical Vapor Deposition
Green and Blue Light Emitting InN/GaN Quantum Wells with Nanosize Structures Grown by Metalorganic Chemical Vapor Deposition
Je Won Kim, | 대한전자공학회 | 2005 ,
5
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Theoretical Calculation and Experimental Verification of the Hf/A1 Concentration Ratio in Nano-mixed HfxAlyOz Films Prepared by Atomic Layer Deposition
Deok-Sin Kil, | 대한전자공학회 | 2005 ,
6
4H-SiC Planar MESFET for Microwave Power Device Applications
4H-SiC Planar MESFET for Microwave Power Device Applications
Hoon Joo Na, | 대한전자공학회 | 2005 ,
7
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Ki-Yeol Park, | 대한전자공학회 | 2005 ,
8
A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well
A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well
Sang-Wook han, | 대한전자공학회 | 2005 ,
9
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
10
Characterizations of Interface-state Density between To pSilicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs
Characterizations of Interface-state Density between To pSilicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs
Won-Ju cho, | 대한전자공학회 | 2005 ,
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