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High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
Dae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae, | 대한전자공학회 | 2004 ,
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