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921
Combined Microchannel-Type Erythrocyte Deformability Test with Optical Tweezers : I. Basdic Principles
Combined Microchannel-Type Erythrocyte Deformability Test with Optical Tweezers : I. Basdic Principles
Won gu Lee, | 한국물리학회 | 2007 ,
922
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization
Dong Ho Kim, | 한국물리학회 | 2007 ,
923
Spin-Polarized Photoreflectance in Ferromagnetic GaMnAs
Spin-Polarized Photoreflectance in Ferromagnetic GaMnAs
Ji-Hee Kim, | 한국물리학회 | 2007 ,
924
Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate
Influence of an Advanced Buffer Layer on the Optical Properties of an InGaN/GaN MQW Grown on a (111) Silicon Substrate
D. R. Hang, | 한국물리학회 | 2007 ,
925
Control of coherent Phonon Decay in GaAs by Using a Secondary Pump Pulse
Control of coherent Phonon Decay in GaAs by Using a Secondary Pump Pulse
Kang-Jeon Han, | 한국물리학회 | 2007 ,
926
Experimental Studies of Low-Field Landau Quantization in Two-dimensional Electron Systems in GaAs/AlGaAs Heterostructures
Experimental Studies of Low-Field Landau Quantization in Two-dimensional Electron Systems in GaAs/AlGaAs Heterostructures
Jing-Han Chen, | 한국물리학회 | 2007 ,
927
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
H. Y. Yeo, | 한국물리학회 | 2007 ,
928
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
S. I. Jung, | 한국물리학회 | 2007 ,
929
Electron-Electron Interactions in a Two-dimensional Electron Systemin an Al0.15Ga0.85N/GaN Heterostructure Grown on Ρ-Type Si
Electron-Electron Interactions in a Two-dimensional Electron Systemin an Al0.15Ga0.85N/GaN Heterostructure Grown on Ρ-Type Si
Jian-Zhe Huang, | 한국물리학회 | 2007 ,
930
2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon
2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon
Han-Geon Kim, | 한국물리학회 | 2007 ,
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