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2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon
2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Han-Geon Kim
- 서명/저자
- 2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon / Han-Geon Kim , Joong-Sik Kim , Taeyoung Won
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 744-748
- 기타저자
- Joong-Sik Kim
- 기타저자
- Taeyoung Won
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147402
MARC
008101203s2007 ulka a eng■022 ▼a03744884
■1001 ▼aHan-Geon Kim
■24510▼a2D Quantum-Mechanical Modeling of a FinFET Having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon▼dHan-Geon Kim▼eJoong-Sik Kim▼eTaeyoung Won
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 744-748
■7001 ▼aJoong-Sik Kim
■7001 ▼aTaeyoung Won
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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