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841
CF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System
CF₄-Based Neutral-Beam Etch Characteristics of Si and SiO₂Using a Low-Angle forward-Reflected Neutral-beam Etching System
D. H. Lee, | 한국물리학회 | 2006 ,
842
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO₂ Films
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO₂ Films
YuKiharu Uraoka, | 한국물리학회 | 2006 ,
843
Advanced Microcolumn Operation for Low-Energy Electron-Beam Lithography
Advanced Microcolumn Operation for Low-Energy Electron-Beam Lithography
Y. C. Kim, | 한국물리학회 | 2006 ,
844
Effect of Process Parameters of UV-Assisted Gas-Phase Cleaning on the Removal of PEG (Polyethyleneglycol) from a Si Substrate
Effect of Process Parameters of UV-Assisted Gas-Phase Cleaning on the Removal of PEG (Polyethyleneglycol) from a Si Substrate
Sung Ku Kwon, | 한국물리학회 | 2006 ,
845
One-Step Implementation of Two-Qubit Quantum Logic Gates
One-Step Implementation of Two-Qubit Quantum Logic Gates
Jing Xu, | 한국물리학회 | 2006 ,
846
Further Insights into the Mechanism of Hydrogen-Plasma Surface Passivation of Low-Dielectric Constant Hydrogen Silsesquioxane(HSQ)
Further Insights into the Mechanism of Hydrogen-Plasma Surface Passivation of Low-Dielectric Constant Hydrogen Silsesquioxane(HSQ)
Sunil Kumar Singh, | 한국물리학회 | 2006 ,
847
Electro-Physical Properties of a Si-Based MIS Structure with a Low-Bftextitk SiOC(-H) Film
Electro-Physical Properties of a Si-Based MIS Structure with a Low-Bftextitk SiOC(-H) Film
Anvar Sagatovich Zakirov, | 한국물리학회 | 2006 ,
848
Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
Jung Hun Lee, | 한국물리학회 | 2006 ,
849
Low-Loss Phase Shifter with a Microstrip Structure Using Ferroelectric BST Thin Films
Low-Loss Phase Shifter with a Microstrip Structure Using Ferroelectric BST Thin Films
Young-Tae Kim, | 한국물리학회 | 2006 ,
850
SiO₂Films Deposited at Low TemPerature by Using APCVD with TEOS/O₃for TFT Applications
SiO₂Films Deposited at Low TemPerature by Using APCVD with TEOS/O₃for TFT Applications
Junsik Kim, | 한국물리학회 | 2006 ,
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