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831
A High-Current RFQ Accelerator for the ADS System in China
A High-Current RFQ Accelerator for the ADS System in China
Shi-Nian FU, | 한국물리학회 | 2006 ,
832
자연기마법에 의한 파인 세라믹 BAR의 가공특성에 관한 연구
자연기마법에 의한 파인 세라믹 BAR의 가공특성에 관한 연구
문상돈, | 한국환경기술학회 | 2006 ,
833
Numerical Study of the Mixing Characteristics for Rotating and Oscillating Stirrers in a Microchannel
Numerical Study of the Mixing Characteristics for Rotating and Oscillating Stirrers in a Microchannel
Sang-joon An., | 한국물리학회 | 2006 ,
834
Time-Resolved Photoluminescence in CdSe/CdZnSe and CdSe/CdMnSe Coupled Quantum Dot Structures
Time-Resolved Photoluminescence in CdSe/CdZnSe and CdSe/CdMnSe Coupled Quantum Dot Structures
Eunsoon Oh., | 한국물리학회 | 2006 ,
835
The Evaporation of a Droplet Produced from a Liquid Surface
The Evaporation of a Droplet Produced from a Liquid Surface
Heetae Kim., | 한국물리학회 | 2006 ,
836
Single-Photon Counting in the 1550-nm Wavelength Region for Quantum Cryptography
Single-Photon Counting in the 1550-nm Wavelength Region for Quantum Cryptography
Chul-woo Park., | 한국물리학회 | 2006 ,
837
Fabrication of a Silicon PIN Diode for Radiation Detection
Fabrication of a Silicon PIN Diode for Radiation Detection
H. G. Nam., | 한국물리학회 | 2006 ,
838
Effect of Surface Passivants on the Photoluminescence from Si Nanocrystals
Effect of Surface Passivants on the Photoluminescence from Si Nanocrystals
Moon-seung Yang., | 한국물리학회 | 2006 ,
839
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
840
Formation of Europium-Silicate Thin Films and Their Photoluminescence Properties
Formation of Europium-Silicate Thin Films and Their Photoluminescence Properties
Young Chul Shin., | 한국물리학회 | 2006 ,
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