본문

  1. Home
1000 Results:AA:CHUNG J 0.546 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
661
기체-액체 혼합 방전에 의한 화학적 활성종 생성 특성
기체-액체 혼합 방전에 의한 화학적 활성종 생성 특성
정재우(Jae Woo Chung), | 대한환경공학회 | 2007 ,
662
Adsorption Of Pb(2) On Metal Oxide Particles Containing Aluminum And Titanium In Aqueous Solutions
Adsorption Of Pb(2) On Metal Oxide Particles Containing Aluminum And Titanium In Aqueous Solutions
Moon Sun Kim, | 대한환경공학회 | 2005 ,
663
Children's Strategic Processing of Korean Relative Clauses
Children's Strategic Processing of Korean Relative Clauses
Jun, Jong Sup, | 서울대학교 어학연구소 | 2004 ,
664
A Theoretical Study of Some Bicyclic Azoalkanes
A Theoretical Study of Some Bicyclic Azoalkanes
Gyusung Chung, | 대한화학회 | 2006 ,
665
Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards
Development of Embedded Non-Volatile FRAMs for High Performance Smart Cards
Kang-Woon Lee, | 대한전자공학회 | 2004 ,
666
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
667
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
668
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Y.K. Park, | 대한전자공학회 | 2003 ,
669
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Sung-Woong Chung, | 대한전자공학회 | 2004 ,
670
Degradation Phenomena of Magnetic Attachments Used Clinically in the Oral Environment
Degradation Phenomena of Magnetic Attachments Used Clinically in the Oral Environment
Chae-Heon Chung, | 대한금속재료학회 | 2006 ,
처음이전62636465666768697071이후마지막