본문

  1. Home
1000 Results:AA:S C YU 0.656 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
651
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
835-nm GaAs/AlGaAs High-Power Laser Diode for Up-Conversion Fiber Lasers
Byungjin Ma, | 한국물리학회 | 2007 ,
652
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Optiminzation of 660-nm-Band AlGaInP Laser Diodes by Using Deep-Level Transient Spectroscopy Analyses
Young Chul Shin, | 한국물리학회 | 2007 ,
653
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
H. Y. Yeo, | 한국물리학회 | 2007 ,
654
High Potential Barrier Effects on Self-Assembled InAs Quantum Dots
High Potential Barrier Effects on Self-Assembled InAs Quantum Dots
S. I. Jung, | 한국물리학회 | 2007 ,
655
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
Near-field Emission Properties of a Self-formed InAs Quantum Dot Laser diode by Using Near-Field Scanning Optical Microscopy
S. I. Jung, | 한국물리학회 | 2007 ,
656
A Multi-Gate Single-electron Transistor Model for Circuit Simulations by SPICE
A Multi-Gate Single-electron Transistor Model for Circuit Simulations by SPICE
Y. S. YU, | 한국물리학회 | 2007 ,
657
Etching of silicon Substrates by Using a Plasmatron
Etching of silicon Substrates by Using a Plasmatron
Vadim Yu Plaksin, | 한국물리학회 | 2007 ,
658
Effect of Thermal Annealing on the Formation of Preferential c-Axis Orientation and an Interfacial Layer for ZnO Thin films Grown on an n-Si(001) Substrate
Effect of Thermal Annealing on the Formation of Preferential c-Axis Orientation and an Interfacial Layer for ZnO Thin films Grown on an n-Si(001) Substrate
J. M. Yuk, | 한국물리학회 | 2007 ,
659
Dependence of the NH₃ Gas Flow Pate on the Electrical Properties of p-Type ZnO Thin Films Prepared by Using Atomic Layer Epitaxy
Dependence of the NH₃ Gas Flow Pate on the Electrical Properties of p-Type ZnO Thin Films Prepared by Using Atomic Layer Epitaxy
Chongmu Lee, | 한국물리학회 | 2007 ,
660
Ferroelectric and Magnetoelectric Properties of BiFeO₃Thin films Prepared on a Membrane Structure
Ferroelectric and Magnetoelectric Properties of BiFeO₃Thin films Prepared on a Membrane Structure
Seiji Nakashima, | 한국물리학회 | 2007 ,
처음이전61626364656667686970이후마지막