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869 Results:AA:D CHO 0.343 sec.
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551
Band Alignments in Oxygen-Deficient HfO₂/Si(100) Interfaces
Band Alignments in Oxygen-Deficient HfO₂/Si(100) Interfaces
Deok-Yong Cho, | 한국물리학회 | 2007 ,
552
A Study on the Absorption Properties of EM Wave Absorbers Using Carbon
A Study on the Absorption Properties of EM Wave Absorbers Using Carbon
Chang Mook Choi, | 한국물리학회 | 2007 ,
553
Magnetic Anisotropy in an Oxo-Centered {Mn₃O}-Type Spin Triangle
Magnetic Anisotropy in an Oxo-Centered {Mn₃O}-Type Spin Triangle
Z. H. Jang, | 한국물리학회 | 2007 ,
554
Size Dependence of Magnetic Properties of Co-Ferrite Nanoparticles
Size Dependence of Magnetic Properties of Co-Ferrite Nanoparticles
Eun Jung Choi, | 한국물리학회 | 2007 ,
555
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Van Do Nguyen, | 한국물리학회 | 2007 ,
556
Study on the Binding Force Between λ-DNA and Various Types of Substrates
Study on the Binding Force Between λ-DNA and Various Types of Substrates
T. H. Nguyen, | 한국물리학회 | 2007 ,
557
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Do-Hyun Oh, | 한국물리학회 | 2007 ,
558
Growth of Vertical Nanorods with a MgZnO Ternary Phase Through Thermal Evaporation
Growth of Vertical Nanorods with a MgZnO Ternary Phase Through Thermal Evaporation
Bo Hyun Kong, | 한국물리학회 | 2007 ,
559
Metal Precursor Effects on Deposition and Interfacial Characteristics of HfO₂ Dielectrics Grown by Atomic Layer Deposition
Metal Precursor Effects on Deposition and Interfacial Characteristics of HfO₂ Dielectrics Grown by Atomic Layer Deposition
In-Sung Park, | 한국물리학회 | 2007 ,
560
Formation Process of Dielectric Alumina Nanowires : Three Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane
Formation Process of Dielectric Alumina Nanowires : Three Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane
J. Kim, | 한국물리학회 | 2007 ,
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