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Formation Process of Dielectric Alumina Nanowires : Three Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane
Formation Process of Dielectric Alumina Nanowires : Three Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- J. Kim
- 서명/저자
- Formation Process of Dielectric Alumina Nanowires : Three Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane / J. Kim , Y. C. Choi , S. D. Bu
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 529-535
- 기타저자
- Y. C. Choi
- 기타저자
- S. D. Bu
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60145868
MARC
008101027s2007 ulka a eng■022 ▼a03744884
■1001 ▼aJ. Kim
■24510▼aFormation Process of Dielectric Alumina Nanowires▼bThree Critical Steps Depending on Etching Rates of Oxide Layers in Anodic Aluminum Oxide Membrane▼dJ. Kim▼eY. C. Choi▼eS. D. Bu
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 529-535
■7001 ▼aY. C. Choi
■7001 ▼aS. D. Bu
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu II.(2006.12)▼d2007, 01
■SIS ▼aS036913▼b60077342▼h8▼s2▼fP
