본문

  1. Home
776 Results:AA:Y I CHANG 0.343 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
501
The Structure and Magnetic Properties of High Electrical Resistivity Granular Films
The Structure and Magnetic Properties of High Electrical Resistivity Granular Films
Won-Jung Jung, | 한국물리학회 | 2006 ,
502
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
Anisotropic X-ray Rocking Curve Due to a Damaged Surface Layer in a Freestanding GaN Thick Film
S. H. Park, | 한국물리학회 | 2006 ,
503
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
Roles of Kinetics and Energetics in the Growth of AIN by Plasma-Assisted Molecular Beam Epitaxy
I. H. Im, | 한국물리학회 | 2006 ,
504
Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
M. H. Jung, | 한국물리학회 | 2006 ,
505
DePendence of the Optical Trapping Efficiency of a Biconcave Red Blood Cell Flowing In a Rectangular Microchannel on the Sphericity Index and the Channel Geometry
DePendence of the Optical Trapping Efficiency of a Biconcave Red Blood Cell Flowing In a Rectangular Microchannel on the Sphericity Index and the Channel Geometry
Won Gu Lee, | 한국물리학회 | 2006 ,
506
Evaluation of the Localized Residual Strain States of GaN Layers by Using a TEM-CBED Method
Evaluation of the Localized Residual Strain States of GaN Layers by Using a TEM-CBED Method
Hui-Youn Shin, | 한국물리학회 | 2006 ,
507
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
H. J. Lee, | 한국물리학회 | 2006 ,
508
Ex[ero,emta; Omvestogatopms pf {i;se-Power-Modulated Inductive Discharges
Ex[ero,emta; Omvestogatopms pf {i;se-Power-Modulated Inductive Discharges
Sang-Hum Seo, | 한국물리학회 | 2006 ,
509
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
June Hee Lee, | 한국물리학회 | 2006 ,
510
The Change of the Magnetic Domain and the Magnetism Property in Rare-Earth-Substituted Garnet Single-Crystal Films
The Change of the Magnetic Domain and the Magnetism Property in Rare-Earth-Substituted Garnet Single-Crystal Films
S. G. Yoon, | 한국물리학회 | 2006 ,
처음이전46474849505152535455이후마지막