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759 Results:AA:S -Y OH 1.150 sec.
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461
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
462
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Breakdown Voltage Characteristics of SiC Schottky Barrier Diode with Aluminum Depositon Edge Termination Structure
Seong-Jin Kim, | 한국물리학회 | 2007 ,
463
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Chul Ho Song, | 한국물리학회 | 2007 ,
464
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Tae Su Oh, | 한국물리학회 | 2007 ,
465
An Analysis of Boundary Effects of Regionally Applied Modified Illumination with DOE at the Back Surface of a Photomask
An Analysis of Boundary Effects of Regionally Applied Modified Illumination with DOE at the Back Surface of a Photomask
Woo-Jung Kim, | 한국물리학회 | 2007 ,
466
Entanglement Description of a Pure Multiqubit
Entanglement Description of a Pure Multiqubit
Hyuk-Jae Lee, | 한국물리학회 | 2006 ,
467
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Time-Resolved Differential Reflection Measurements on Ga₁-xMnxAs
Shin Kim, | 한국물리학회 | 2006 ,
468
The Effect of Synthesis Conditions on the Formation of Titanate Nanotubes
The Effect of Synthesis Conditions on the Formation of Titanate Nanotubes
M. Qamar, | 한국물리학회 | 2006 ,
469
A Dual-concentric-Core Photonic Crystal Fiber for Broadband Dispersion Compensation
A Dual-concentric-Core Photonic Crystal Fiber for Broadband Dispersion Compensation
Soan Kim, | 한국물리학회 | 2006 ,
470
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
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