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421
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
J. H. Lee, | 한국물리학회 | 2007 ,
422
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
423
Study of a Thin Al₂O₃/TaN Absorber Stack on Ru-Capped Multilayers
Study of a Thin Al₂O₃/TaN Absorber Stack on Ru-Capped Multilayers
Tae Geun Kim, | 한국물리학회 | 2007 ,
424
Principles of Certification for High-Precision Optical Parts and Systems Based on a Diffraction Interferometer
Principles of Certification for High-Precision Optical Parts and Systems Based on a Diffraction Interferometer
Kyeong-Hee Lee, | 한국물리학회 | 2006 ,
425
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Femtosecond Pump-Probe MOKE Microscopy for an Ultrafast Spin Dynamics Study
Kyeong-Dong Lee, | 한국물리학회 | 2006 ,
426
Formation of the Electron Spectrum of ZnSe-Based Scintillators under Annealing in Zinc Vapor
Formation of the Electron Spectrum of ZnSe-Based Scintillators under Annealing in Zinc Vapor
Y. K. Kim, | 한국물리학회 | 2006 ,
427
High-Temperature Thermoelectric Properties of Cu-Doped Ca₃-xCuxCo₄O9 (0 ≤ x ≤ 0.4)
High-Temperature Thermoelectric Properties of Cu-Doped Ca₃-xCuxCo₄O9 (0 ≤ x ≤ 0.4)
K. Park, | 한국물리학회 | 2006 ,
428
High-Temperatur Thermoelectric Properties of Sb-Containging (ZnO)m(In₁-xSbx)₂O₃(0≤ x ≤ 0.1)
High-Temperatur Thermoelectric Properties of Sb-Containging (ZnO)m(In₁-xSbx)₂O₃(0≤ x ≤ 0.1)
K. Park, | 한국물리학회 | 2006 ,
429
Spectral Characteristics of Organic Light-Emitting Diodes with(SiO₂/TiO₂) Dielectric Layers
Spectral Characteristics of Organic Light-Emitting Diodes with(SiO₂/TiO₂) Dielectric Layers
Boo-Young Jung, | 한국물리학회 | 2006 ,
430
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Kyooho Jung, | 한국물리학회 | 2006 ,
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