본문

  1. Home
608 Results:AA:YI B J 0.237 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
401
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Kyu Man Cha, | 한국물리학회 | 2006 ,
402
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
Growth of Cubic GaN on a Nitrided AlGaAs(001) Substrate by Using Hydried Vapor Phase Epitaxy
H. J. Lee, | 한국물리학회 | 2006 ,
403
Functional Classification and Characterization in Corynebacterium Glutamicum ATCC 13032 by Using Shannon's Information Entropy and Position Weight Matrix
Functional Classification and Characterization in Corynebacterium Glutamicum ATCC 13032 by Using Shannon's Information Entropy and Position Weight Matrix
Ji-Young Choi, | 한국물리학회 | 2006 ,
404
Characterization of an Intense Laser-Produced Preformed Plasma for Proton Generation
Characterization of an Intense Laser-Produced Preformed Plasma for Proton Generation
A.SAGISAKA, | 한국물리학회 | 2007 ,
405
Theoretical Analysis of Laser-Locked Spectroscopy Employing a Confocal Fabry-Perot Cavity
Theoretical Analysis of Laser-Locked Spectroscopy Employing a Confocal Fabry-Perot Cavity
Lei Dong, | 한국물리학회 | 2006 ,
406
The Lasing Characteristics of a Passively Q-SwithchedNd:YVO4 Laser Using a Cr:YAG Saturable Absorber
The Lasing Characteristics of a Passively Q-SwithchedNd:YVO4 Laser Using a Cr:YAG Saturable Absorber
Jonghoon Yi, | 한국물리학회 | 2007 ,
407
Influence of Annealing Temperature and Atmosphere on the Properties of ITO Films Depostied Using a Powdery Target
Influence of Annealing Temperature and Atmosphere on the Properties of ITO Films Depostied Using a Powdery Target
Jaehyeong Lee, | 한국물리학회 | 2007 ,
408
Impedance Spectroscopy Analysis of Organic Light-Emitting Diodes Fabricated on Plasma-Treated Indium-Tin-Oxide surfaces
Impedance Spectroscopy Analysis of Organic Light-Emitting Diodes Fabricated on Plasma-Treated Indium-Tin-Oxide surfaces
Hyungjun Park, | 한국물리학회 | 2007 ,
409
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
Roughness Analysis of GaN Surfaces at Different Annealing Temperatures for an AIN Buffer Layer
M. K. Bae, | 한국물리학회 | 2007 ,
410
A Prediction of Half-Metallicity in a Co2-Based Full Heusler Compound with the 4d Transition-Metal Element, Co2ZrSi: A First-Principles Study
A Prediction of Half-Metallicity in a Co2-Based Full Heusler Compound with the 4d Transition-Metal Element, Co2ZrSi: A First-Principles Study
Jin Ying Jiu, | 한국물리학회 | 2007 ,
처음이전36373839404142434445이후마지막