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401
Low-Frequency Noise In High-k Gate Dielectric Nanoscale MOSFET's
Low-Frequency Noise In High-k Gate Dielectric Nanoscale MOSFET's
I. K. Han, | 한국물리학회 | 2006 ,
402
Formation of MgO Powders by Using a Combustion Method and the Thermodynamics of Gas Adsorption
Formation of MgO Powders by Using a Combustion Method and the Thermodynamics of Gas Adsorption
D. H. Seo, | 한국물리학회 | 2006 ,
403
Crystalline-Phase-Dependent Cathodoluminescence of Li-Doped Gd₂O₃ : Eu³+ Thin-Film Phosphors
Crystalline-Phase-Dependent Cathodoluminescence of Li-Doped Gd₂O₃ : Eu³+ Thin-Film Phosphors
Jung Hyun Jeong, | 한국물리학회 | 2006 ,
404
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Hoon Choi, | 한국물리학회 | 2006 ,
405
A Highly Stable Quartz Crystal Microbalance Sensor and Its Application to Water Vapor Measurements
A Highly Stable Quartz Crystal Microbalance Sensor and Its Application to Water Vapor Measurements
Su Yong Kwon, | 한국물리학회 | 2006 ,
406
Spatial Cluster Analysis for Earthquake on the Korean Peninsula
Spatial Cluster Analysis for Earthquake on the Korean Peninsula
Chang Wan Kang, | 한국데이터정보과학회 | 2006 ,
407
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Jung-Hui Lee, | 한국물리학회 | 2007 ,
408
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Yun Hye Cho, | 한국물리학회 | 2007 ,
409
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Youngsook Jeon, | 한국물리학회 | 2007 ,
410
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Sunghyun Hwang, | 한국물리학회 | 2007 ,
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