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48 Results:AA:DAE JAE KIM 0.406 sec.
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31
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Kyu Man Cha, | 한국물리학회 | 2006 ,
32
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
R. Navamathavan, | 한국물리학회 | 2006 ,
33
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
Yong Kim, | 한국물리학회 | 2007 ,
34
Performance Improvement of the Wald Test for GPS RTK with the Assistance of INS
Performance Improvement of the Wald Test for GPS RTK with the Assistance of INS
Mamoun F. Abdel-Hafez, | 제어자동화시스템공학회 | 2008 ,
35
Task Assignment Strategies for a Complex Real-time Network System
Task Assignment Strategies for a Complex Real-time Network System
Hongryeol Kim, | 제어자동화시스템공학회 | 2006 ,
36
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition
Cha, Kyu Man, | 한국물리학회 | 2006 ,
37
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Navamathavan, R., | 한국물리학회 | 2006 ,
38
Beyond-CMOS : Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs
Beyond-CMOS : Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs
Dae-Hyun Kim., | 대한전자공학회 | 2006 ,
39
Oxidation of aromatic Aldehydes with Tetrbutylammonium Fluride : Competition with the Cannizzaro Reaction
Oxidation of aromatic Aldehydes with Tetrbutylammonium Fluride : Competition with the Cannizzaro Reaction
Chung Kyoo-Hyun, | 대한화학회 | 2006 ,
40
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
High fт 30nm Triple-Gate In０.７GaAs HEMTs withDamage-Free SiO₂/SiNx Sidewall Process and BCB Planarization
Dae-Hyun Kim, Seong-Jin Yeon, Saegn-Sub Song, Jae, | 대한전자공학회 | 2004 ,
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