본문

  1. Home
564 Results:AA:W CHOI 0.265 sec.
RSS 
Multilingual
 การค้นหาขั้นสูง
 เดินทางมาถึงค้นหาวัสดุใหม่
พิมพ์ที่เลือก Select Export to Excel
371
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
A New Pixel Design of Active-Matrix Organic Light-Emitting diode Display Using Amorphous-Silicon Backplane
Jae Won Choi, | 한국물리학회 | 2007 ,
372
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
373
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
M. Kim, | 한국물리학회 | 2007 ,
374
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Chul Ho Song, | 한국물리학회 | 2007 ,
375
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Hyung Wook Choi, | 한국물리학회 | 2006 ,
376
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
J. S. Kim, | 한국물리학회 | 2006 ,
377
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Won-Jun Ko, | 한국물리학회 | 2006 ,
378
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
379
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
380
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Jonghyun Lee, | 한국물리학회 | 2006 ,
처음이전33343536373839404142이후마지막