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371
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
372
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
Crystallization Process and Mixed Alkali Effect in Lithium-Potassium Borate Glass
M. Kim, | 한국물리학회 | 2007 ,
373
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Dielectric Properties of Amorphous KNbXO5(X=Ge, Si)
Chul Ho Song, | 한국물리학회 | 2007 ,
374
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Dependence of the Material Properties and PDP Discharging Characteristics on the MgO Evaporation Rate
Hyung Wook Choi, | 한국물리학회 | 2006 ,
375
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
J. S. Kim, | 한국물리학회 | 2006 ,
376
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Low-Temperature Sintering and Microwave Dielectric Properties of Ba₃Ti₄-xZrxNb₄O₂₁ Ceramics with the Substitution of Zr for Ti
Won-Jun Ko, | 한국물리학회 | 2006 ,
377
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
378
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
379
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Jonghyun Lee, | 한국물리학회 | 2006 ,
380
Low-Frequency Noise In High-k Gate Dielectric Nanoscale MOSFET's
Low-Frequency Noise In High-k Gate Dielectric Nanoscale MOSFET's
I. K. Han, | 한국물리학회 | 2006 ,
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