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361
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
362
Optical Anisotropy of TiO₂and MgF₂ Thin Films Prepared by Glancing Angle Deposition
Optical Anisotropy of TiO₂and MgF₂ Thin Films Prepared by Glancing Angle Deposition
Seouk-Hoon Woo, | 한국물리학회 | 2006 ,
363
NonLinear Optical Response of 1-D Photonic Crystals Fabricated by Using a Sol-Gel Method
NonLinear Optical Response of 1-D Photonic Crystals Fabricated by Using a Sol-Gel Method
Jisoo Hwang, | 한국물리학회 | 2006 ,
364
A Study of the Discharge Characteristics of a New Penning Gas in ac-PDPs
A Study of the Discharge Characteristics of a New Penning Gas in ac-PDPs
B. K. Joung, | 한국물리학회 | 2006 ,
365
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Hyeong Joon Kim, | 한국물리학회 | 2006 ,
366
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
367
SiO₂Films Deposited at Low TemPerature by Using APCVD with TEOS/O₃for TFT Applications
SiO₂Films Deposited at Low TemPerature by Using APCVD with TEOS/O₃for TFT Applications
Junsik Kim, | 한국물리학회 | 2006 ,
368
Fabrication of Epitaxial fcc Co/Cu Nanostructures/Si(001)
Fabrication of Epitaxial fcc Co/Cu Nanostructures/Si(001)
H. M. Hwang, | 한국물리학회 | 2006 ,
369
Picosecond Nonlinear Optical Transmission Measurement on Anatase TiO₂Thin Films
Picosecond Nonlinear Optical Transmission Measurement on Anatase TiO₂Thin Films
Min Jung Kim, | 한국물리학회 | 2006 ,
370
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
R. Navamathavan, | 한국물리학회 | 2006 ,
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