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822 Results:AA:SANG W KIM 0.305 sec.
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341
Al2O3 Coating and Filling of Carbon Nanotubes
Al2O3 Coating and Filling of Carbon Nanotubes
Jong Soo Lee, | 한국전기전자재료학회 | 2004 ,
342
Thermal Stability and Electrical Properties of HfOxNy, Gate Dielectrics with TaN Gate Electrode
Thermal Stability and Electrical Properties of HfOxNy, Gate Dielectrics with TaN Gate Electrode
Jeon Ho Kim, | 한국전기전자재료학회 | 2004 ,
343
Al2O3 Nano-Coating by Atomic Layer Deposition
Al2O3 Nano-Coating by Atomic Layer Deposition
Byung Don Min, | 한국전기전자재료학회 | 2004 ,
344
Study on Electrical Properties of X-ray Sensor Based on CsI:Na-Selenium Film
Study on Electrical Properties of X-ray Sensor Based on CsI:Na-Selenium Film
Ji Koon Park, | 한국전기전자재료학회 | 2004 ,
345
Roles of Phosphoric Acid in Slurry for Cu and TaN CMP
Roles of Phosphoric Acid in Slurry for Cu and TaN CMP
Sang Yong Kim, | 한국전기전자재료학회 | 2004 ,
346
Zinc Sulfide-selenium X-ray Detector for Digital Radiography
Zinc Sulfide-selenium X-ray Detector for Digital Radiography
Ji Koon Park, | 한국전기전자재료학회 | 2003 ,
347
Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry
Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry
So Young Jeong, | 한국전기전자재료학회 | 2003 ,
348
Failure Analysis for High via Resistance by HDP CVD System for IMD Layer
Failure Analysis for High via Resistance by HDP CVD System for IMD Layer
Sang Yong Kim, | 한국전기전자재료학회 | 2003 ,
349
Reduction of Plasma Process Induced Damage during HDP IMD Deposition
Reduction of Plasma Process Induced Damage during HDP IMD Deposition
Sang Yong Kim, | 한국전기전자재료학회 | 2003 ,
350
X-ray Response Characteristic of Zn in the Polycrystalline Cd1-xZnxTe Detector for Digital Radiography
X-ray Response Characteristic of Zn in the Polycrystalline Cd1-xZnxTe Detector for Digital Radiography
Sang Sik Kang, | 한국전기전자재료학회 | 2003 ,
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