본문

  1. Home
96 Results:UU:VOL49NO320069 0.109 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
21
Observation of a Wavelength-Dependent Shift of the Extinction Angle of Polarizers in Spectroscopic Ellipsometry
Observation of a Wavelength-Dependent Shift of the Extinction Angle of Polarizers in Spectroscopic Ellipsometry
S. Y. Lee, | 한국물리학회 | 2006 ,
22
Thermal Effect Study for a Chemically Amplified Resist
Thermal Effect Study for a Chemically Amplified Resist
Sang-Kon Kim, | 한국물리학회 | 2006 ,
23
Structural and Corrosive Properties of ZrO₂Thin films on Zircaloy-4 by RF Reactive Magnetron Sputtering
Structural and Corrosive Properties of ZrO₂Thin films on Zircaloy-4 by RF Reactive Magnetron Sputtering
Soo Ho Kim, | 한국물리학회 | 2006 ,
24
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
25
Electrochemical Properties of Aluminum-Doped Silicon Films as Anode Materials for Lithium-Ion Batteries
Electrochemical Properties of Aluminum-Doped Silicon Films as Anode Materials for Lithium-Ion Batteries
Young-Jae Kim, | 한국물리학회 | 2006 ,
26
Electrical Characterization of Si Nanoparticles Embedded in SiO₂Thin Films
Electrical Characterization of Si Nanoparticles Embedded in SiO₂Thin Films
Yang Do Kim, | 한국물리학회 | 2006 ,
27
Fabrication and Electrical Characterization of a Floating Gate Capacitor with In₂O₃ Nano-Particles
Fabrication and Electrical Characterization of a Floating Gate Capacitor with In₂O₃ Nano-Particles
Dong Uk Lee, | 한국물리학회 | 2006 ,
28
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
29
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
30
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
처음이전12345678910이후마지막