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62 Results:AA:KIM JY 0.203 sec.
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21
Effect of Thermal Annealing on the Formation of Preferential c-Axis Orientation and an Interfacial Layer for ZnO Thin films Grown on an n-Si(001) Substrate
Effect of Thermal Annealing on the Formation of Preferential c-Axis Orientation and an Interfacial Layer for ZnO Thin films Grown on an n-Si(001) Substrate
J. M. Yuk, | 한국물리학회 | 2007 ,
22
Thickness Dependence of Domain Switching of Ferroelectric PbZr0.35Ti0.65O₃ Thin Film by Scanning Probe Microscopy
Thickness Dependence of Domain Switching of Ferroelectric PbZr0.35Ti0.65O₃ Thin Film by Scanning Probe Microscopy
C. H. Kim, | 한국물리학회 | 2007 ,
23
Domain Switching of Ferroelectric Thin Films by Using a Scanning Probe Microscope
Domain Switching of Ferroelectric Thin Films by Using a Scanning Probe Microscope
J. Y. Son, | 한국물리학회 | 2007 ,
24
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
Y. K. Noh, | 한국물리학회 | 2007 ,
25
Properties of In₂O₃-SnO₂Thin Films due to the Cathode Condition in the DC Magnetron Sputtering Process
Properties of In₂O₃-SnO₂Thin Films due to the Cathode Condition in the DC Magnetron Sputtering Process
S.-W. Ryu, | 한국물리학회 | 2007 ,
26
Experimental Evidence for Weak Insulator-Quantum Hall Transitions in GaN/AlGaN Two-dimensional Electron Systems
Experimental Evidence for Weak Insulator-Quantum Hall Transitions in GaN/AlGaN Two-dimensional Electron Systems
E. S. Kannan, | 한국물리학회 | 2007 ,
27
Jacketing of CiCC for KSTAR Superconducting Magnet System
Jacketing of CiCC for KSTAR Superconducting Magnet System
B. S. Lim, | 한국물리학회 | 2006 ,
28
Machining of the KSTAR TF Coil Structure
Machining of the KSTAR TF Coil Structure
K. H. Hong, | 한국물리학회 | 2006 ,
29
Curret Status of the KSTAR TF Superconducting Magnet Development
Curret Status of the KSTAR TF Superconducting Magnet Development
B. S. Lim, | 한국물리학회 | 2006 ,
30
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
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