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271
Effects of p-GaN Growth Temperature on a Green InGaN/GaN Multiple Quantum Well
Effects of p-GaN Growth Temperature on a Green InGaN/GaN Multiple Quantum Well
Jin-Woo Ju, | 한국물리학회 | 2007 ,
272
Terahertz Electrical Characteristics of Heavily Doped N-GaAs Thin Films
Terahertz Electrical Characteristics of Heavily Doped N-GaAs Thin Films
Ui Whan Kim, | 한국물리학회 | 2007 ,
273
Characteristics of W-B-C-N Thin Diffusion Barrier for Cu Interconnects
Characteristics of W-B-C-N Thin Diffusion Barrier for Cu Interconnects
Soo In Kim, | 한국물리학회 | 2007 ,
274
ARMA Model for Neural Networks Predictor of DGPS Carrier Phase Correction
ARMA Model for Neural Networks Predictor of DGPS Carrier Phase Correction
Arif Indriyatmoko, | 한국물리학회 | 2007 ,
275
Primary Scintillation Amplification Method with a Two-Phase Xenon Detector to Search for a WIMP, an Example of SUSY Dark Matter
Primary Scintillation Amplification Method with a Two-Phase Xenon Detector to Search for a WIMP, an Example of SUSY Dark Matter
Inkyu Park, | 한국물리학회 | 2007 ,
276
Nitrogen Concentration Dependence of W-B-C-N Thin Films
Nitrogen Concentration Dependence of W-B-C-N Thin Films
Soo In Kim, | 한국물리학회 | 2007 ,
277
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Measurement of Isomeric Cross-Section Ratios for the 45Sc(γ,n)44m.gSc, natTi(γ, χ)44m.gSc, 103Rh(γ,4n)99m,gRh, and natFe(γ, χ)52m,gMn Reactions Induced by 65-MeV Bremsstrahlung
Van Do Nguyen, | 한국물리학회 | 2007 ,
278
Photoresist spray Coating for Resist Film Performance of Deep Silicon Cavities
Photoresist spray Coating for Resist Film Performance of Deep Silicon Cavities
Duk-Soo Eun, | 한국물리학회 | 2007 ,
279
Characterization of the dopant Dependence of Ni-silicide on a SOI Substrate for a Nano-Scale CMOSFET
Characterization of the dopant Dependence of Ni-silicide on a SOI Substrate for a Nano-Scale CMOSFET
Soon-Yen Jung, | 한국물리학회 | 2007 ,
280
Resistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition
Resistive Switching Characteristics of HfO₂ Grown by Atomic Layer Deposition
Kyong-Rae Kim, | 한국물리학회 | 2007 ,
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