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211
Numerical Study for A Secondary Circular Clarifier With Density Effect
Numerical Study for A Secondary Circular Clarifier With Density Effect
Hey Suk Kim, | 대한환경공학회 | 2005 ,
212
Mathematical Model of Sulfur Utilizing Autotrophic Denitrification in An Up-Flow Packed-Bed Reactor Based on Biomass Distribution
Mathematical Model of Sulfur Utilizing Autotrophic Denitrification in An Up-Flow Packed-Bed Reactor Based on Biomass Distribution
Woo Shin Park, | 대한환경공학회 | 2005 ,
213
Suppression of Hydrogen Consuming Bacteria in Anaerobic Hydrogen Fermentation
Suppression of Hydrogen Consuming Bacteria in Anaerobic Hydrogen Fermentation
Woo Shin Park, | 대한환경공학회 | 2005 ,
214
Toxicity Identification And Confirmation Of Metal Platting Wastewater
Toxicity Identification And Confirmation Of Metal Platting Wastewater
Hyo Jin Kim, | 대한환경공학회 | 2007 ,
215
Single-source Precursor Based ZnSe Thin Film Preparation through MOCVD Method
Single-source Precursor Based ZnSe Thin Film Preparation through MOCVD Method
Kook Won Seo, | 대한화학회 | 2006 ,
216
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
217
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
218
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM
S.H.Shin, | 대한전자공학회 | 2003 ,
219
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
220
Simulation of Quantum Effects in the Nano-scale Semiconductor Device
Simulation of Quantum Effects in the Nano-scale Semiconductor Device
Seonghoon Jin, | 대한전자공학회 | 2004 ,
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